elektr on ische bauelemente sm4001a thru sm4007a v o l t age 50v ~ 1000v 1.0 amp surface moun t silicon rectifiers f e a t u r e s . r o h s c o m p l i a n t p r o d u c t . i d e a l f o r s u r f a c e m o u n t a p p l i c a t i o n s . e a s y p i c k a n d p l a c e . b u i l t - i n s t r a i n r e l i e f . h i g h s u r g e c u r r e n t c a p a b i l i t y m e c h a n i c a l d a t a . c a s e : m o l d e d p l a s t i c . e p o x y : u l 9 4 v - 0 r a t e f l a m e r e t a r d a n t . t e r m i n a l s : s o l d e r p l a t e d , s o l d e r a b l e p e r m i l - s t d - 2 0 2 f , m e t h o d 2 0 8 g u a r a n t e e d . p o l a r i t y : c o l o r b a n d d e n o t e s c a t h o d e e n d . m o u n t i n g p o s i t i o n : a n y . w e i g h t : 0 . 0 6 3 g r a m m a x i m u m r a t i n g s a n d e l e c t r i c a l c h a r a c t e r i s t i c s r a t i n g 2 5 c o a m b i e n t t e m p e r a t u r e u n l e s s o t h e r w i s e s p e c i f i e d . s i n g l e p h a s e h a l f w a v e , 6 0 h z , r e s i s t i v e o r i n d u c t i v e l o a d . f o r c a p a c i t i v e l o a d , d e r a t e c u r r e n t b y 2 0 % . t y p e n u m b e r s y m b o l s m 4 0 0 1 a s m 4 0 0 2 a s m 4 0 0 3 a s m 4 0 0 4 a s m 4 0 0 5 a s m 4 0 0 6 a s m 4 0 0 7 a u n i t s maximum repetitive peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward rectified current .375"(9.5mm) lead length at ta=75 : i f(av) 1.0 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (jedec method) i fsm 30 a maximum instantaneous forward voltage at 1.0a v f 1.1 v maximum reverse current t j =25 : 5.0 at rated dc blocking voltage t j =100 : i r 50 a typical junction capacitance (note 1) c j 15 pf typical thermal resistance (note 2) r ja 50 : / w junction temperature t j -65 ~ +175 : storage temperature t stg 25 5 : storage humidity rh 45 5 % note: 1. measured at 1mhz and applied reverse voltage of 4.0v d.c. 2. thermal resistance from junction to ambient. http://www.secosgmbh.com/ any changing of specification will not be informed individual 01-jun-2002 rev. a page 1 of 2 a suffix of "-c" specifies halogen & lead-free a b d g e h f c dimensions in millimeters dimensions in inches a 1.25 1.65 0.049 0.065 b 3.99 4.60 0.157 0.181 c 2.50 2.90 0.098 0.114 d 1.98 2.44 0.078 0.096 e 0.051 0.203 0.002 0.008 f 4.78 5.28 0.188 0.208 g 0.76 1.52 0.030 0.060 h 0.152 0.305 0.006 0.012 s m a
elektr on ische bauelemente sm4001a thru sm4007a v o l t age 50v ~ 1000v 1.0 amp surface moun t silicon rectifiers r a t i n g a n d c h a r a c t e r i s t i c c u r v e s ( s m 4 0 0 1 a t h r u s m 4 0 0 7 a ) h t t p : / / w w w . s e c o s g m b h . c o m / a n y c h a n g i n g o f s p e c i f i c a t i o n w i l l n o t b e i n f o r m e d i n d i v i d u a l .1 1.0 10 100 fig.3 - typical reverse characteristics reverse leakage current, ( a) percentage rated peak reverse voltage 0 20 40 60 80 100 120 140 .01 fig.2-typical forward current derating curve average forward current,(a) tj=100 c tj=25 c fig.4-maximum non-repetitive forward surge current 0.2 0 0.4 0.6 0.8 1.0 1.2 ambient temperature ( c) single phase half wave 60hz resistive or inductive load 0.1 1.0 .01 10 50 fig.1-typical forward characteristics instantaneous forward current,(a) forward voltage,(v) pulse width 300us 1% duty cycle .6 .7 .8 .9 1.0 1.1 1.2 1.3 3.0 tj=25 c fig.5-typical junction capacitance reverse voltage,(v) junction capacitance,(pf) 35 30 25 20 15 10 5 0 .01 .05 .1 .5 1 5 10 50 100 peak forwaard surge current,(a) 10 0 20 30 40 50 number of cycles at 60hz 110 5 50 100 tj=25 c 8.3ms single half sine wave jedec method 0 20 40 60 80 100 120 140 160 180 200 01-jun-2002 rev. a page 2 of 2
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